Ólífrænt kísilkarbíð

is a semiconductor that occurs in nature in the form of the extremely rare mineral moissanite. Since 1893 it has been mass-produced as powders and crystals, used as abrasives, etc. Among the non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called gold steel sand or refractory sand. China's industrially produced silicon carbide is divided into two types: black silicon carbide and green silicon carbide, both of which are hexagonal crystals.

1. crystalline materials have been developed for more than 100 years. In 1892, Acheson invented a method for synthesizing SiC powder from silicon dioxide and carbon, and in this method, a by-product was discovered, which was flake SiC materials, but these flake SiC materials were not of high purity and small size, and could not be used to make semiconductor devices. It was not until 1955 that Lel succeeded in growing relatively pure SiC crystals by sublimation technology, also known as the Lely method.

2. sheet materials prepared by the Lely method, it cannot be used as a commercial technology for growing SiC single crystals. During 1978-1981, Tarov and Tsvetkov improved on the Lely method by introducing a seed crystal into the sublimation furnace and designing a suitable temperature gradient to control the transport of the SiC source to the seed crystal based on thermodynamic and kinetic considerations, a growth process known as the modified Lely method, also known as the seed crystal sublimation method, or the physical vapor phase transport (PVT) method.

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